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cjac110sn10.pdf Principales características:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High Power and current handing capability Good stability and uniformity with high EAS Load switch Excellent package for good heat dissipation High density cell design for ultra low RDS(ON) Lead free product is acquired APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power management MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAC110SN10 = Part No. CJAC Solid dot = Pin1 indica

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 cjac110sn10.pdf Design, MOSFET, Power

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