Todos los transistores

 

cjd4435.pdf Principales características:

cjd4435cjd4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET TO-251-3L FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. DRAIN 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -9.1 A Power Dissipation (note 1, Ta=25 ) 1 PD W Maximum Power Dissipation (note 2, Tc=25 ) 15 Thermal Resistance from Junction to Ambient (t 10S) R JA 125 /W Operating Junction Temperature TJ 150 Storage Temperature Tstg -55 +150 . B,Jan,2012 Electrical characteristics ( Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250

 

Keywords - ALL TRANSISTORS. Principales características

 cjd4435.pdf Design, MOSFET, Power

 cjd4435.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cjd4435.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.