cjd4435.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4435 P-Channel 30-V(D-S) MOSFET TO-251-3L FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. DRAIN 3. SOURCE Load Switch Battery Switch Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -9.1 APower Dissipation (note 1, Ta=25) 1 PD W Maximum Power Dissipation (note 2, Tc=25) 15 Thermal Resistance from Junction to Ambient (t10S) RJA 125 /W Operating Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150. B,Jan,2012 Electrical characteristics ( Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max UnitStatic Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250