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cjq4435.pdf Principales características:

cjq4435cjq4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m @ -9.1A -30V 35m @ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AP PLICATIONS Battery Switch Load Switch MARKING Equivalent Circuit Q4435= Device code D D D D 8 7 6 5 Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device 1 2 3 4 YY=Date Code S S S G Front side MAXIMUM RATINGS ( Ta=25 unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Co

 

Keywords - ALL TRANSISTORS. Principales características

 cjq4435.pdf Design, MOSFET, Power

 cjq4435.pdf RoHS Compliant, Service, Triacs, Semiconductor

 cjq4435.pdf Database, Innovation, IC, Electricity

 

 
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