cjq4435.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.APPLICATIONS Battery Switch Load Switch MARKING Equivalent Circuit Q4435= Device code D D D D8 7 6 5 Solid dot=Pin1 indicator Solid dot = Green molding compound device, if none, the normal device 1 2 3 4 YY=Date Code S S S GFront sideMAXIMUM RATINGS ( Ta=25 unless otherwise noted ) Parameter Symbol Limit UnitDrain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 VCo