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cjq4435s.pdf Principales características:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYP V(BR)DSS SOP8 18m @-10V -30V -7.3A 26m @ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AP PLICATIONS Battery Switch Load Switch MARKING Equivalent Circuit Q4435S= Device code D D D D 8 7 6 5 Solid dot=Pin1 indicator Q4435S Solid dot = Green molding compound device, . YY if none, the normal device 1 2 3 4 YY=Date Code S S S G MAXIMUM RATINGS ( Ta=25 unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V Co

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 cjq4435s.pdf Design, MOSFET, Power

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