cjq4435s.pdf datasheet:
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.APPLICATIONS Battery Switch Load Switch MARKING Equivalent Circuit Q4435S= Device code D D D D8 7 6 5Solid dot=Pin1 indicator Q4435SSolid dot = Green molding compound device, .YY if none, the normal device 1 2 3 4YY=Date Code S S S GMAXIMUM RATINGS ( Ta=25 unless otherwise noted )Parameter Symbol Limit UnitDrain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 VCo
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cjq4435s.pdf Design, MOSFET, Power
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