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2n3906v.pdf Principales características:

SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=-30V, VEB=-3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05 + H 0.40 P P VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. _ J 0.12 + 0.05 _ K 0.2 + 0.05 Low Collector Output Capacitance P 5 Cob=4.5pF(Max.) @VCB=-5V. Complementary to 2N3904V. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VSM VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA IB Base Current -50 mA PC Collector Power Dissipation 100 mW

Keywords - ALL TRANSISTORS. Principales características

 2n3906v.pdf Design, MOSFET, Power

 2n3906v.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3906v.pdf Database, Innovation, IC, Electricity