2n3906v.pdf datasheet:

SEMICONDUCTOR 2N3906VTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EBFEATURESLow Leakage CurrentDIM MILLIMETERS2_: ICEX=-50nA(Max.), IBL=-50nA(Max.) A 1.2 +0.05_B 0.8 +0.05@VCE=-30V, VEB=-3V. 13_C 0.5 + 0.05_D 0.3 + 0.05Excellent DC Current Gain Linearity._E 1.2 + 0.05Low Saturation Voltage _G 0.8 0.05+H 0.40P P: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA._J 0.12 + 0.05_K 0.2 + 0.05Low Collector Output CapacitanceP 5: Cob=4.5pF(Max.) @VCB=-5V.Complementary to 2N3904V.1. EMITTER2. BASE3. COLLECTORMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVSMVCBOCollector-Base Voltage -40 VVCEOCollector-Emitter Voltage -40 VVEBOEmitter-Base Voltage -5 VICCollector Current -200 mAIBBase Current -50 mAPCCollector Power Dissipation 100 mW