kf5n53d i.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

kf5n53d i.pdf Principales características:

KF5N53D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX VDSS= 525V, ID= 4.1A H 0.90 MAX H J _ J 1.80 + 0.20 Drain-Source ON Resistance RDS(ON)=1.5 (Max) @VGS = 10V E _ K 2.30 + 0.10 G N Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX 1 2 3 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 ) O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-S