kf5n53f.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

kf5n53f.pdf Principales características:

KF5N53F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V, ID= 5.0A Drain-Source ON Resistance RDS(ON)=1.5 @VGS = 10V Qg(typ) = 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V 30 @TC=25 5.0* ID Drain Current @TC=100 2.9* A IDP Pulsed (Note1) 13* Single Pulsed Avalanche Energy EAS 200 mJ (Note 2) Repetitive Avalanche Energy EAR 4.3 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) 37.9 W Tc=25 Drain Power PD Dissipat