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kgf15n60fda.pdf Principales características:

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SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Times 5us(@TC=100 ) Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCES Collector-Emitter Voltage 600 V VGES 20 Gate-Emitter Voltage V 15 A @Tc=25 IC Collector Current 7.5 A @Tc=100 ICM* Pulsed Collector Current 30 A IF Diode Continuous Forward Current @Tc=25 15 A IFM* Diode Maximum Forward Current 45 A 50 W @Tc=25 PD Maximum Power Dissipation 20 W @Tc=100 Tj *Repetitive rating Pulse width limited by max. junction temperature

 

Keywords - ALL TRANSISTORS. Principales características

 kgf15n60fda.pdf Design, MOSFET, Power

 kgf15n60fda.pdf RoHS Compliant, Service, Triacs, Semiconductor

 kgf15n60fda.pdf Database, Innovation, IC, Electricity

 

 
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