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2pb709aw.pdf Principales características:

2pb709aw

SMD Type IC SMD Type Transistors PNP General Purpose Transistor 2PB709AW Features High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -6 V Collector current IC -100 mA Peak collector current ICM -200 mA Total power dissipation Ptot 200 mW Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO IE =0; VCB = -45 V -10 nA IE =0; VCB =-45 V; Tj =150 -5 A Emitter cut-off current IEBO IC =0; VEB =-5 V -10 nA DC

 

Keywords - ALL TRANSISTORS. Principales características

 2pb709aw.pdf Design, MOSFET, Power

 2pb709aw.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2pb709aw.pdf Database, Innovation, IC, Electricity

 

 
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