Скачать даташит для 2pb709aw:

SMD Type ICSMD Type TransistorsPNP General Purpose Transistor2PB709AWFeaturesHigh collector current (max. 100 mA).Low collector-emitter saturation voltage (max. 500 mV).1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -45 VCollector-emitter voltage VCEO -45 VEmitter-base voltage VEBO -6 VCollector current IC -100 mAPeak collector current ICM -200 mATotal power dissipation Ptot 200 mWStorage temperature Tstg -65 to +150Junction temperature Tj 150Operating ambient temperature Tamb -65 to +150Thermal resistance from junction to ambient Rth j-a 625 K/WElectrical Characteristics Ta = 25Parameter Symbol Testconditons Min Typ Max UnitCollector cut-off current ICBO IE =0; VCB = -45 V -10 nAIE =0; VCB =-45 V; Tj =150 -5 AEmitter cut-off current IEBO IC =0; VEB =-5 V -10 nADC