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2sc2383.pdf Principales características:

SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 Features High voltage VCEO=160V Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 160 Collector- emitter breakdown voltage VCEO Ic= 10 mA IB= 0 160 V Emitter - base breakdown voltage VEBO IE= 100 A IC= 0 6 Collector-base cut-off current ICBO VCB= 150 V , IE= 0 1 uA

Keywords - ALL TRANSISTORS. Principales características

 2sc2383.pdf Design, MOSFET, Power

 2sc2383.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc2383.pdf Database, Innovation, IC, Electricity