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SMD Type TransistorsNPN Transistors2SC23831.70 0.1 Features High voltage: VCEO=160V Large continuous collector current capability0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 160 Collector- emitter breakdown voltage VCEO Ic= 10 mA IB= 0 160 V Emitter - base breakdown voltage VEBO IE= 100A IC= 0 6 Collector-base cut-off current ICBO VCB= 150 V , IE= 0 1uA