bd135 bd137 bd139.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bd135 bd137 bd139.pdf Principales características:

BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(1.5A) Low Voltage(80V) 2.500 7.400 Dimensions in inches and (millimeters) 2.900 1.100 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.800 1.500 Va3.900 lue 3.000 Symbol Parameter 4.100 Units 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0.300 VCBO Collector-Base Voltage 45 60 80 V 2.100 VCEO Collector-Emitter Voltage 45 60 80 V 2.300 1.170 VEBO Emitter-Base Voltage 5 V 1.370 15.300 Collector Current -Continuous 1.5 A IC 15.700 Collector power dissipation PC 1.25 W 0.660 Junction Temperature TJ 0.860 150 0.450 Storage Temperature Tstg 2.290 TYP -55-150 0.600 4.480 4.680 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT BD135