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mmbt3906lt1.pdf Principales características:

mmbt3906lt1mmbt3906lt1

MMBT3906LT1 PNP General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Epitaxial planar die construction. Dim Min Max A 2.70 3.10 E Complementary NPN type available B 1.10 1.50 K B C 1.0 Typical (MMBT3904). D 0.4 Typical E 0.35 0.48 J Collector Current Capability ICM =-200mA. D G 1.80 2.00 G H 0.02 0.1 Low Voltage(Max -40V). J 0.1 Typical H K 2.20 2.60 C All Dimensions in mm APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking Package Code MMBT3906LT1 2A SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS Value UNIT VCBO collector-base voltage open emitter -40 V VCEO collector-emitter voltage open base -40 V VEBO emitter-base voltage open collector -6 V IC collector current (DC) -100 mA ICM peak collector curren

 

Keywords - ALL TRANSISTORS. Principales características

 mmbt3906lt1.pdf Design, MOSFET, Power

 mmbt3906lt1.pdf RoHS Compliant, Service, Triacs, Semiconductor

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