mmbt3906lt1.pdf datasheet:

MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 TypicalHK 2.20 2.60CAll Dimensions in mm APPLICATIONS Ideal for medium power amplification and switching. ORDERING INFORMATION Type No. Marking Package Code MMBT3906LT1 2A SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSYMBOL PARAMETER CONDITIONS Value UNIT VCBO collector-base voltage open emitter -40 V VCEO collector-emitter voltage open base -40 V VEBO emitter-base voltage open collector -6 V IC collector current (DC) -100 mA ICM peak collector curren