Todos los transistores

ss8050 sot-23.pdf Principales características:

SS8050 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100 A, IC=0 5 V Collector cut-off current ICBO VCB=40V, IE=0 0.1 A Collector cut-off

Keywords - ALL TRANSISTORS. Principales características

 ss8050 sot-23.pdf Design, MOSFET, Power

 ss8050 sot-23.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ss8050 sot-23.pdf Database, Innovation, IC, Electricity