3cg1132.pdf Principales características:
2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V V CEO -32 V V EBO -5.0 V I C -1.0 A I CP -2.0 A P C 500 mW P (Tc=25 ) C 2.0 W T j 150 T stg -55 150 /Electrical characteristics(Ta=25 ) Rating Symbol Test condition Unit Min Typ Max V I =-50 A I =0 -40 V CBO C B V I =-1.0mA I =0 -32 V CEO C B V I =-50 A I =0 -5.0 V EBO E C I V =-20V I =0 -0.5 A CBO CB E I V =-4.0V I =0 -0.5 A
Keywords - ALL TRANSISTORS. Principales características
3cg1132.pdf Design, MOSFET, Power
3cg1132.pdf RoHS Compliant, Service, Triacs, Semiconductor
3cg1132.pdf Database, Innovation, IC, Electricity
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