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mmgt200q120b6c.pdf Principales características:

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MMGT200Q120B6C 1200V 200A IGBT Module June 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T =25 C unless otherwise specified) C Symbol Parameter/Test Conditions Values Unit VCES TJ=25 1200 Collector Emitter Voltage V VGES Gate Emitter Voltage 20 TC=25 , TJmax=175 320 IC DC Collector Current TC=105 , TJmax=175 200 A ICM Repetitive Peak Collector Current tp=1ms 400 Ptot TC=25 , TJmax=175 125

 

Keywords - ALL TRANSISTORS. Principales características

 mmgt200q120b6c.pdf Design, MOSFET, Power

 mmgt200q120b6c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mmgt200q120b6c.pdf Database, Innovation, IC, Electricity

 

 
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