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MMGT200Q120B6C1200V 200A IGBT ModuleJune 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS(T =25C unless otherwise specified)CSymbol Parameter/Test Conditions ValuesUnitVCES TJ=25 1200Collector Emitter VoltageVVGESGate Emitter Voltage 20TC=25, TJmax=175 320ICDC Collector CurrentTC=105, TJmax=175 200 AICMRepetitive Peak Collector Current tp=1ms 400Ptot TC=25, TJmax=175 125

 

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 mmgt200q120b6c.pdf Проектирование, MOSFET, Мощность

 mmgt200q120b6c.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmgt200q120b6c.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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