mmgt75wd120xb6c.pdf Principales características:
MMGT75WD120XB6C 1200V 75A PIM Module August 2016 Preliminary RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included APPLICATIONS AC motor control Motion/servo control Rectifier+Brake+Inverter Inverter and power supplies IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T =25 C unless otherwise specified) C Symbol Parameter/Test Conditions Values Unit VCES TJ=25 1200 Collector Emitter Voltage V VGES Gate Emitter Voltage 20 TC=25 , TJmax=175 115 IC DC Collector Current TC=100 , TJmax=175 75 A ICM
Keywords - ALL TRANSISTORS. Principales características
mmgt75wd120xb6c.pdf Design, MOSFET, Power
mmgt75wd120xb6c.pdf RoHS Compliant, Service, Triacs, Semiconductor
mmgt75wd120xb6c.pdf Database, Innovation, IC, Electricity
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