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2n2919u.pdf Principales características:

2n2919u2n2919u

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /355 DEVICES LEVELS 2N2919 2N2919L 2N2919U JAN 2N2920 2N2920L 2N2920U JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 30 mAdc One Both Section 1 Sections 2 PT 200 Total Power Dissipation @ TA = +25 C 350 mW TO-78 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C NOTES 1. Derate linearly 1.143

 

Keywords - ALL TRANSISTORS. Principales características

 2n2919u.pdf Design, MOSFET, Power

 2n2919u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n2919u.pdf Database, Innovation, IC, Electricity

 

 
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