2n3821 2n3822 2n3823.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n3821 2n3822 2n3823.pdf Principales características:

TECHNICAL DATA N-CHANNEL J-FET DEPLETION MODE Qualified per MIL-PRF-19500/375 Devices Qualified Level JANTX 2N3821 2N3822 2N3823 JANTXV MAXIMUM RATINGS 2N3821 Parameters / Test Conditions Symbol 2N3822 2N3823 Unit Gate-Source Voltage VGSR 50 30 V Drain-Source Voltage V 50 30 V DS Drain-Gate Voltage V 50 30 V DG Gate Current I 10 mA GF TO-72* Power Dissipation T = +250C (1) P 300 mW A T (TO-206AF) 0 Operating Junction & Storage Temperature Range T , T -55 to +200 C j stg 0 (1) Derate linearly 1.7 mW/0C for TA +25 C. *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Units Gate-Source Breakdown Voltage V = 0, I = 1.0 Adc 2N3821, 2N3822 V 50 Vdc DS G (BR)GSSR 2N3823 30 Gate Reverse Current V = 0, V = 30 Vdc 2N3821, 2N3822 I 0.