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mgp15n60u.pdf Principales características:

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's Data Sheet MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO 220 termination scheme to provide an enhanced and reliable high 15 A @ 90 C voltage blocking capability. It also provides low on voltage which 26 A @ 25 C results in efficient operation at high current. 600 VOLTS Industry Standard TO 220 Package VERY LOW High Speed Eoff 63 mJ/A typical at 125 C ON VOLTAGE Low On Voltage 1.7 V typical at 8.0 A, 125 C Robust High Voltage Termination ESD Protection Gate Emitter Zener Diodes C G G C E CASE 221A 09 E STYLE 9 TO 220AB MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol Value Unit Collector Em

 

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