mrf5003r.pdf datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF5003/D The RF MOSFET Line RF Power Field Effect Transistor N Channel Enhancement Mode MRF5003 The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment. 3.0 W, 7.5 V, 512 MHz Guaranteed Performance at 512 MHz, 7.5 Volts N CHANNEL Output Power = 3.0 Watts BROADBAND RF POWER FET Power Gain = 9.5 dB Efficiency = 45% Characterized with Series Equivalent Large Signal Impedance Parameters S Parameter Characterization at High Bias Levels Excellent Thermal Stability All Gold Metal for Ultra Reliability Capable of Handling 20 1 VSWR