Todos los transistores

mmbt2907a-ms.pdf Principales características:

www.msksemi.com MMBT2907A-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A- MS) 1. BASE Marking 2F 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW R JA Thermal Resistance Junction to Ambient 500 /W Operation Junction and TJ,Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10 A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO* IC=-1

Keywords - ALL TRANSISTORS. Principales características

 mmbt2907a-ms.pdf Design, MOSFET, Power

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