mmbt2907a-ms.pdf datasheet:

www.msksemi.comMMBT2907A-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A-MS)1. BASEMarking: 2F 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PD Total Device Dissipation 250 mW RJA Thermal Resistance Junction to Ambient 500 /W Operation Junction and TJ,Tstg -55 to +150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 VCollector-emitter breakdown voltage V(BR)CEO* IC=-1