ncep015n60ll.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ncep015n60ll.pdf Principales características:

NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination of Excellent gate charge x R product(FOM) DS(on) R and Q . This device is ideal for high-frequency switching DS(ON) g Very low on-resistance R DS(on) and synchronous rectification. 175 C operating temperature Application Pb-free lead plating 100% UIS TESTED! DC/DC Converter 100% Vds TESTED! Ideal for high-frequency switching and synchronous rectification TOLL Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Pac