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NCEP015N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =370A DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM) DS(on) losses are minimized due to an extremely low combination of Very low on-resistance R DS(on) R and Q . This device is ideal for high-frequency switching DS(ON) g 175 C operating temperature and synchronous rectification. Pb-free lead plating Application 100% UIS TESTED! DC/DC Converter 100% Vds TESTED! Ideal for high-frequency switching and synchronous rectification TOLL-8L Schematic Diagram Package Marking and Ordering Information Device Marking Device Devic

 

Keywords - ALL TRANSISTORS. Principales características

 ncep015n85ll.pdf Design, MOSFET, Power

 ncep015n85ll.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ncep015n85ll.pdf Database, Innovation, IC, Electricity

 

 
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