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2n3773 2n6609.pdf Principales características:

2n3773_2n66092n3773_2n6609

NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching http //onsemi.com circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY Features POWER TRANSISTORS Pb-Free Packages are Available** 140 V, 150 W High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage MARKING DIAGRAM hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 2Nxxxx MAXIMUM RATINGS (Note 1) MEX AYYWW Rating Symbol Value Unit TO-204 CASE 1-07 Collector - Emitter Voltag

 

Keywords - ALL TRANSISTORS. Principales características

 2n3773 2n6609.pdf Design, MOSFET, Power

 2n3773 2n6609.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n3773 2n6609.pdf Database, Innovation, IC, Electricity

 

 
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