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2n3906.pdf Principales características:

2N3906 General Purpose Transistors PNP Silicon http //onsemi.com Features COLLECTOR Pb-Free Packages are Available* 3 2 BASE MAXIMUM RATINGS Rating Symbol Value Unit 1 EMITTER Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 40 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO-92 CASE 29 Total Device Dissipation @ TA = 25 C PD 625 mW STYLE 1 Derate above 25 C 5.0 mW/ C Total Power Dissipation @ TA = 60 C PD 250 mW 1 1 2 2 Total Device Dissipation @ TC = 25 C PD 1.5 W 3 3 Derate above 25 C 12 mW/ C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 C AMMO PACK Temperature Range THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, J

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