2n3906.pdf datasheet:
2N3906General PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR Pb-Free Packages are Available*32BASEMAXIMUM RATINGSRating Symbol Value Unit1EMITTERCollector - Emitter Voltage VCEO 40 VdcCollector - Base Voltage VCBO 40 VdcEmitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO-92CASE 29Total Device Dissipation @ TA = 25C PD 625 mWSTYLE 1Derate above 25C 5.0 mW/CTotal Power Dissipation @ TA = 60C PD 250 mW1122Total Device Dissipation @ TC = 25C PD 1.5 W 33Derate above 25C 12 mW/CSTRAIGHT LEAD BENT LEADBULK PACK TAPE & REELOperating and Storage Junction TJ, Tstg -55 to +150 CAMMO PACKTemperature RangeTHERMAL CHARACTERISTICS (Note 1)Characteristic Symbol Max Unit MARKING DIAGRAMThermal Resistance, Junction-to-Ambient RqJA 200 C/WThermal Resistance, J
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