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bc489-a.pdf Principales características:

BC489, BC489A High Current Transistors NPN Silicon Features http //onsemi.com These are Pb-Free Devices* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc 3 Collector-Base Voltage VCBO 80 Vdc EMITTER Collector-Emitter Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 0.5 Adc Total Power Dissipation @ TA = 25 C PD 625 mW TO-92 Derate above TA = 25 C 5.0 mW/ C CASE 29 STYLE 17 Total Power Dissipation @ TA = 25 C PD 1.5 W Derate above TA = 25 C 12 mW/ C 1 1 Operating and Storage Junction TJ, Tstg -55 to +150 C 2 2 3 3 Temperature Range STRAIGHT LEAD BENT LEAD THERMAL CHARACTERISTICS BULK PACK TAPE & REEL AMMO PACK Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W MARKING DIAGRAM Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding

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 bc489-a.pdf Design, MOSFET, Power

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