bc639rl1g bc639g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

bc639rl1g bc639g.pdf Principales características:

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-92 Total Device Dissipation @ TA = 25 C PD 625 mW CASE 29 Derate above 25 C 5.0 mW/ C STYLE 14 Total Device Dissipation @ TC = 25 C PD 800 mW 1 Derate above 25 C 12 mW/ C 1 2 2 3 3 Operating and Storage Junction TJ, Tstg -55 to +150 C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W MARKING DIAGRAMS Thermal Resistance, Junction-to-Cas