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bc639rl1g bc639g.pdf datasheet:

bc639rl1g_bc639gbc639rl1g_bc639g

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-92Total Device Dissipation @ TA = 25C PD 625 mW CASE 29Derate above 25C 5.0 mW/CSTYLE 14Total Device Dissipation @ TC = 25C PD 800 mW1Derate above 25C 12 mW/C12233Operating and Storage Junction TJ, Tstg -55 to +150 CSTRAIGHT LEAD BENT LEADTemperature RangeBULK PACK TAPE & REELAMMO PACKTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction-to-Ambient RqJA 200 C/WMARKING DIAGRAMSThermal Resistance, Junction-to-Cas

 

Keywords - ALL TRANSISTORS DATASHEET

 bc639rl1g bc639g.pdf Design, MOSFET, Power

 bc639rl1g bc639g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc639rl1g bc639g.pdf Database, Innovation, IC, Electricity

 

 
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