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FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features Description NPT Trench Technology, Positive Temperature Coefficient Using ON Semiconductor's proprietary trench design and Low Saturation Voltage VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25 C superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This Low Switching Loss Eoff, typ = 0.96 mJ device is well suited for the reso-nant or soft switching @ IC = 25 A and TC = 25 C application such as induction heating, microwave oven. Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven C C G G TO-3P G C E E E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage 20 V Collector Cur

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