fga25n120antdtu.pdf datasheet:

FGA25N120ANTDTU1200 V, 25 A NPT Trench IGBTFeatures Description NPT Trench Technology, Positive Temperature CoefficientUsing ON Semiconductor's proprietary trench design and Low Saturation Voltage: VCE(sat), typ = 2.0 V advanced NPT technology, the 1200V NPT IGBT offers @ IC = 25 A and TC = 25C superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This Low Switching Loss: Eoff, typ = 0.96 mJdevice is well suited for the reso-nant or soft switching @ IC = 25 A and TC = 25Capplication such as induction heating, microwave oven. Extremely Enhanced Avalanche CapabilityApplications Induction Heating, Microwave OvenCCGGTO-3PG C EEEAbsolute Maximum RatingsSymbol Description Ratings UnitVCES Collector-Emitter Voltage 1200 VVGES Gate-Emitter Voltage 20 VCollector Cur