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mmbt2222awt1g.pdf Principales características:

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MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Unique CASE 419 Site and Control Change Requirements STYLE 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit P1 MG Total Device Dissipation FR- 5 Board PD 150 mW

 

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