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ngtb15n120lwg.pdf Principales características:

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NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device is a rugged co-packaged free wheeling diode with a low forward voltage. 15 A, 1200 V Features VCEsat = 1.8 V Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Eoff = 0.56 mJ Low Gate Charge C 5 ms Short-Circuit Capability These are Pb-Free Devices Typical Applications Inverter Welding Machines G Microwave Ovens Industrial Switching E Motor Control Inverter ABSOLUTE MAXIMUM RATING

 

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