ngtb15n120lwg.pdf datasheet:

NGTB15N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on-state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device is a rugged co-packaged free wheeling diode with alow forward voltage.15 A, 1200 VFeaturesVCEsat = 1.8 V Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Eoff = 0.56 mJ Low Gate ChargeC 5 ms Short-Circuit Capability These are Pb-Free DevicesTypical Applications Inverter Welding MachinesG Microwave Ovens Industrial SwitchingE Motor Control InverterABSOLUTE MAXIMUM RATING