ngtb40n120lwg.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ngtb40n120lwg.pdf Principales características:

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device is a rugged co-packaged free wheeling diode with a low forward voltage. 40 A, 1200 V Features VCEsat = 1.90 V Low Saturation Voltage using Trench with Field Stop Technology Eoff = 1.40 mJ Low Switching Loss Reduces System Power Dissipation Low Gate Charge C 5 ms Short-Circuit Capability These are Pb-Free Devices Typical Applications G Inverter Welding Machines Microwave Ovens E Industrial Switching Motor Control Inverter ABSOLUTE MAXIMUM RAT