ntmfs4c03n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c03n.pdf Principales características:

NTMFS4C03N Power MOSFET 30 V, 2.1 mW, 136 A, Single N-Channel, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 2.1 mW @ 10 V 30 V 136 A 2.8 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V D (5,6) Gate-to-Source Voltage VGS "20 V Continuous Drain Cur- TC = 25 C ID 136 A rent RqJC (Notes 1, 3) Steady State G (4) Power Dissipation TC = 25 C PD 64 W RqJC (Notes 1, 3) Continuous Drain Cur- TA = 25 C ID 30 A S (1,2,3) rent RqJA (Notes 1, 2, Steady N-CHANNEL MOSFET 3) State Power Dissipation TA = 25 C PD 3.1 W RqJA (Notes 1, 2, 3) MARKING DIAGRA