ntmfs4c05n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c05n.pdf Principales características:

NTMFS4C05N Power MOSFET 30 V, 78 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 3.4 mW @ 10 V 30 V 78 A CPU Power Delivery 5.0 mW @ 4.5 V DC-DC Converters MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V G (4) Continuous Drain TA = 25 C ID 21.7 A Current RqJA TA = 80 C 16.3 (Note 1) S (1,2,3) Power Dissipation TA = 25 C PD 2.57 W N-CHANNEL MOSFET RqJA (Note 1) Continuous Drain TA = 25 C ID 34.8 A MARKING Current RqJA 10 s DIAGRAMS TA = 80 C 26.0 (Note 1) D Powe