ntmfs4c06n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c06n.pdf Principales características:

NTMFS4C06N Power MOSFET 30 V, 69 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 4.0 mW @ 10 V Applications 30 V 69 A CPU Power Delivery 6.0 mW @ 4.5 V DC-DC Converters D (5-8) MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V G (4) Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 20.0 A Current RqJA S (1,2,3) TA = 80 C 14.9 (Note 1) N-CHANNEL MOSFET Power Dissipation TA = 25 C PD 2.55 W RqJA (Note 1) MARKING Continuous Drain TA = 25 C ID 31.6 A DIAGRAMS Current RqJA 10 s TA = 80 C 23.7 D (Note 1) S D