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ntmfs4c08n.pdf Principales características:

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NTMFS4C08N Power MOSFET 30 V, 52 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery 5.8 mW @ 10 V 30 V 52 A DC-DC Converters 8.5 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 16.4 A G (4) Current RqJA TA = 80 C 12.3 (Note 1) Power Dissipation TA = 25 C PD 2.51 W S (1,2,3) RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25 C ID 25.3 A Current RqJA 10 s TA = 80 C 19.0 (Note 1) MARKING DIAGRAMS Power Di

 

Keywords - ALL TRANSISTORS. Principales características

 ntmfs4c08n.pdf Design, MOSFET, Power

 ntmfs4c08n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c08n.pdf Database, Innovation, IC, Electricity

 

 
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