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ntmfs4c10n.pdf Principales características:

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NTMFS4C10N Power MOSFET 30 V, 46 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 6.95 mW @ 10 V CPU Power Delivery 30 V 46 A 10.8 mW @ 4.5 V DC-DC Converters MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V G (4) Continuous Drain TA = 25 C ID 15.0 A Current RqJA TA = 80 C 11.2 (Note 1) S (1,2,3) Power Dissipation TA = 25 C PD 2.49 W RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25 C ID 22.5 A Current RqJA 10 s MARKING TA = 80 C 16.8 (Note 1) DIAGRAMS D Pow

 

Keywords - ALL TRANSISTORS. Principales características

 ntmfs4c10n.pdf Design, MOSFET, Power

 ntmfs4c10n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ntmfs4c10n.pdf Database, Innovation, IC, Electricity

 

 
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