ntmfs4c13n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ntmfs4c13n.pdf Principales características:

NTMFS4C13N Power MOSFET 30 V, 38 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications 9.1 mW @ 10 V CPU Power Delivery 30 V 38 A DC-DC Converters 13.8 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) D (5-8) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V Continuous Drain TA = 25 C ID 13.0 A G (4) Current RqJA TA = 80 C 9.7 (Note 1) Power Dissipation TA = 25 C PD 2.46 W S (1,2,3) RqJA (Note 1) N-CHANNEL MOSFET Continuous Drain TA = 25 C ID 19.1 A Current RqJA 10 s TA = 80 C 14.3 MARKING (Note 1) DIAGRAM Power